Four Probe Method | Resistivity and band gap of semiconductor | Omlabs |
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Four Probe Method | Resistivity and band gap of semiconductor | Omlabs |
5 605 просмотров · 1 год назад
OM LABS
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5 605 просмотров · 1 год назад
In video we can determine the Resistivity and band gap of semiconductor Germanium. These both resistivity and energy band gap can be measured by four probe method.
Resitivity
In this method, four probes are arranged in a line on the sample, with two outer probes passing current and two inner probes measuring voltage. The resistivity of the sample can be calculated at different temperatures.
Band gap
The band gap of the semiconductor can be determined by plotting the logarithm of resistivity versus inverse temperature. The slope of the line is related to the band gap.
Here are some details about the four-probe method:
The probes are equally spaced on the sample.
The tips of the probes are supported by springs to minimize damage to the sample.
The inner probes draw no current because of the high input impedance voltmeter. This eliminates unwanted voltage drops caused by contact resistance between the probes and the sample.
The resistivity of Germanium crystals or slices can be measured using the four-probe method, but the resistivity of the material must be uniform in the area of measurement.
The four-probe method is a simple and robust method that can be used to measure the resistivity of thin films.
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