Writing Magnetic Memory with a Hidden Spin Pattern | Nature

Octupole-driven spin torque switching of antiferromagnetic tunnel junctions First author: Jaimin Kang Last author: Pedram Khalili Amiri Co-first authors: Jaimin Kang, Mohammad Hamdi Journal: Nature Published online: 2026-10-21 DOI: https://doi.org/10.1038/s41586-026-11... Researchers demonstrated electrical writing and reading in nanoscale junctions made with antiferromagnets, whose magnetic moments cancel overall, achieving resistance changes of up to 363% at room temperature. Their experiments and modelling reveal how an electrically driven twisting effect can switch the underlying magnetic pattern, opening a route toward compact magnetic memories and potentially ultrafast devices.